The most significant one is that the reported numbers refer-for the vast majority-to modules from just one manufacturer (i.e., the first company manufacturing and commercializing the SHJ technology). We complement the survey with information about the main failure modes reported in the literature for this technology and an analysis of the limits and caveats for this type of study. Additionally, we observe some mild correlations between the PLRs and the climatic conditions of the installation sites, even if we need to stress that for each climate, we find a large variability, including a PLR value as low as 0.29%/year. These values fall between previously reported PLR of c-Si and thin-film modules. Our refined analysis leads us to slightly higher PLR for SHJ modules: 0.80%/year and 0.83%/year for median and average values, respectively. This methodology is understandably arbitrary, but it helps increasing the robustness of the present analysis. We then apply a filtering procedure to distinguish what we perceive to be high-accuracy datasets from less accurate ones. These numbers are in line with PLR generally reported for field-deployed crystalline silicon (c-Si modules). Despite a long list of caveats specific to this type of meta-analysis, when considering all published datasets, we obtain for SHJ modules median and average PLR values of 0.56%/year and 0.70%/year, respectively. Publications on this specific subject are still limited however, enough available data exist to drive some preliminary conclusions. In this work, we perform a literature survey collecting performance data (and performance loss rates ) published for SHJ modules.
The growth of the SHJ technology requires confidence from manufacturers, investors, and system developers about its reliability and long-term performance.
The high-efficiency silicon heterojunction (SHJ) technology is now perceived mature enough to enter the Giga-Watt manufacturing scale with several players around the globe.
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